Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs


A study of the negative and positive bias temperature instability (N/PBTI) reliability of FinFETs with totally different TiN metal gates deposited by either atomic layer deposition (ALD) or physical vapor deposition (PVD) on $hboxHfO_2$ dielectrics found that the nonuniformity of the interfacial oxide layer is closely related to reliability characteristics. FinFETs with an ALD TiN gate exhibit higher NBTI and PBTI lifetimes than those with a PVD TiN gate. Also, the dependence of fin width on NBTI reliability looked to be worse with narrower fins, whereas PBTI reliability improves.

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