Improved Resistance Switching Characteristics in Ti-Doped for Resistive Nonvolatile Memory Devices


A standard approach of doping to control the bistable resistance switching in $hboxYb_2hboxO_3$ was investigated for nonvolatile memory applications. With the assistance of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-restricted current in $hboxYb_2hboxO_3$ to Schottky sort in $hboxYbTiO_x$. The program/erase cycles with successive readout operation over $hbox10^5$ cycles can be achieved while not any degradation. No knowledge loss was found upon continuous readout process at each space temperature and 85 $^circhboxC$. The $hboxNi/YbTiO_x/hboxTaN$ memory is a promising candidate to be integrated into future memory processes.

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