A Lateral Power MOSFET With the Double Extended Trench Gate


A lateral power MOSFET with the double extended trench gate (DETG) is proposed during this letter. The double extended gate introduces the additional charges into the drift region and also the substrate; then, the electrical field distribution of the device is optimized to enhance the breakdown voltage (BV) and the precise on-resistance $(R_rm on, rm sp)$. Simulation results show that the BV of the DETG structure is increased from 126 V of the traditional trench gate (CTG) structure to 171 V with the same length and thickness of the drift region. Furthermore, its $R_rm on, rm sp$ is nearly 64% but that of the CTG structure.

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