AlGaN/GaN MISHEMTs With High- Gate Dielectric


A high-$kappa hboxLaLuO_3$ (LLO) thin film is successfully incorporated into AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) because the gate dielectric. The LLO–AlGaN/GaN MISHEMTs fabricated with a planar method exhibit a high $I_rm ON/I_rm OFF$ of $hbox10^9$, a most drain current of 820 mA/mm at $V_rm GS = 3 hboxV$, a peak transconductance $(G_m)$ of $sim$192 mS/mm, and a steep subthreshold slope $(SS)$ of $sim$seventy three mV/dec.

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