PROJECT TITLE :
Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs
A distribution of interface states $(D_rm it)$ in SOI MOSFETs has been characterized by a subbandgap optical differential body-issue (SODBoF) technique. We adopted a subbandgap $(E_rm ph < E_g)$ optical source as a virtual gate on the body-contactless SOI MOSFETs beneath the subthreshold $(V_rm GS < V_T)$ current–voltage characteristics. Employing a differentiation to the body issue, any possible error from the edge voltage is additionally suppressed. We applied the SODBoF technique to n- and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges $D_rm it = hbox10^10 - hbox10^11 hboxcm^-2cdot hboxeV^-1$ with a typical U-form.
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