PROJECT TITLE :
Analysis of Complementary RRAM Switching
A completely unique procedure to decompose the $I$– $V$ switching curves of complementary resistive switching (CRS) RRAM cells into the intrinsic switching characteristics of its individual constituting elements is proposed based mostly on the set behavior of $hboxHfO_2$-primarily based bipolar RRAM parts. Analysis of various sorts of complementary cells indicates that terribly similar intrinsic switching behaviors occur in strongly completely different types of bipolar switching RRAM, but with a robust material dependence of the characteristic switching voltage.
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