Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

A New Recess Method for SA-STI nand Flash Memory

1 1 1 1 1 Rating 4.90 (70 Votes)

PROJECT TITLE :

A New Recess Method for SA-STI nand Flash Memory

ABSTRACT:

In this letter, we propose a new shallow trench isolation (STI) recess effect on the self-aligned STI of nand Flash memory devices. In the current nand Flash cell design, increasing the recess depth of STI recess yields a higher gate coupling ratio and lower floating-gate (FG) interference to achieve better immunity to process fluctuation. However, the current design is limited by significantly slower Fowler–Nordheim (FN) erase speed and degraded channel characteristics. Slow erase speed is caused by the accumulation of holes around channel edges, while the degraded channel is owing to FN cycling stress-induced interface damage. The proposed STI recess structure maintains a proper distance between the channel edge and the control gate, as well as blocks the FG interference without increasing cell-to-cell spacing.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


A New Recess Method for SA-STI nand Flash Memory - 4.9 out of 5 based on 70 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...