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Operating TSV in Stable Accumulation Capacitance Region by Utilizing $hbox_hbox_$-Induced Negative Fixed Charge

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PROJECT TITLE :

Operating TSV in Stable Accumulation Capacitance Region by Utilizing $hbox_hbox_$-Induced Negative Fixed Charge

ABSTRACT:

The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is achieved by utilizing $hbox{Al}_{2}hbox{O}_{3}$-induced negative fixed charge $(vert Q_{f}vert = hbox{7.44} times hbox{10}^{11} hbox{cm}^{-2})$ at the Si–liner interface. This causes a positive shift in the flat-band voltage $(Delta V_{rm FB} = hbox{6.85} hbox{V})$ and results in the TSV operating in the stable accumulation capacitance region within operating voltage of interests ( $sim$0–5 V). The leakage current density of the TSV with $hbox{Al}_{2}hbox{O}_{3}$ layer and PETEOS liner is improved by $simhbox{10}times$ after annealing in forming gas $(hbox{N}_{2}/hbox{H}_{2})$ at 300 $^{circ}hbox{C}$ for 30 min.


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Operating TSV in Stable Accumulation Capacitance Region by Utilizing $hbox_hbox_$-Induced Negative Fixed Charge - 4.9 out of 5 based on 24 votes

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