Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

p-Type Electrical Transport of Chemically Doped Epitaxial Graphene Nanoribbons

1 1 1 1 1 Rating 4.80 (49 Votes)

PROJECT TITLE :

p-Type Electrical Transport of Chemically Doped Epitaxial Graphene Nanoribbons

ABSTRACT:

We present the first demonstration of p-type electrical transport in chemically doped epitaxial graphene (EG) nanoribbons produced on silicon carbide (SiC). The thermal annealing of cross-linked thin films of hydrogen silsesquioxane (HSQ) is found to be capable of overcoming intrinsic n-type doping from the SiC substrate, resulting in p-type functionality. A smooth transition from n- to p-type carriers, spanning a Fermi shift of $sim$0.45 eV, is observed by controlling the density and chemical composition of HSQ. This technique provides a route for complementary transistor and interconnect fabrication, as well as facilitating chemically doped p-n junctions in EG.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


p-Type Electrical Transport of Chemically Doped Epitaxial Graphene Nanoribbons - 4.8 out of 5 based on 49 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...