Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition


We developed a thin-film transistor (TFT) with an amorphous-indium–gallium–zinc oxide (IGZO) channel and aluminium oxide ($hbox{AlO}_{rm x}$) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the $hbox{AlO}_{rm x}$ gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2 $hbox{cm}^{2}cdot hbox{V}^{-1}cdot hbox{s}^{-1}$ and an on/off current ratio of over $hbox{10}^{8}$. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors.

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