PROJECT TITLE :
A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels
A novel complementary metal–oxide–semiconductor inverter with poly-Si nanowire channels is proposed and demonstrated in this letter. The scheme employs a clever tilted-angle implant process in the fabrication; therefore, the formation of the source and drain of both p-channel and n-channel devices requires only one lithographic step. The fabricated n-channel and p-channel field-effect transistors in the inverters show a high on/off current ratio, an acceptable subthreshold swing, and a symmetric driving current, thus enabling the realization of excellent characteristics of the inverters.
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