Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum


Neodymium-doped aluminum (Al–Nd) was used as a gate electrode and was anodized, forming a layer of $hbox{Nd:Al}_{2}hbox{O}_{3}$ as the dielectric for indium–zinc oxide (IZO) thin-film transistors (TFTs). The $hbox{Nd:Al}_{2} hbox{O}_{3}$ showed high capacitance (110 $hbox{nF/cm}^{2}$ ), high breakdown field ($>$6 MV/cm), and low leakage current ($<hbox{10}^{-7} hbox{A/cm}^{2}$ at 2.0 MV/cm) without hillocks when annealed at 300 $^{circ}hbox{C}$. The TFT showed a low operating voltage of 3 V, a low off current of $sim hbox{10}^{-13} hbox{A}$, a high mobility of 13.7 $ hbox{cm}^{2}cdothbox{V}^{-1}cdothbox{s}^{-1}$, and excellent electrical stability because of the good interface coupling between $hbox{Nd:Al}_{2}hbox{O}_{3}$ and IZO, resulting from the low electronegativities of Al and Nd.

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