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Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure

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PROJECT TITLE :

Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure

ABSTRACT:

Stable and fast-switching thin-film transistors and circuits incorporating 5-nm-thick amorphous-InGaZnO (a-IGZO) active layers are demonstrated, and their dependence on channel length is studied. Turn-on voltage shifts in the positive gate voltage direction as the channel length increases. A low area density of defects in the bulk a-IGZO, which is ultrathin, results in good stability under positive bias stress, whereas interdiffusion of electrons/electron donors from the highly doped source and drain regions to the channel edges results in the dependence of turn-on voltage on channel length. Stable operation of an 11-stage ring oscillator is achieved with a propagation delay time of $sim!!hbox{97} muhbox{s/stage}$ due to reduced gate-to-drain overlap capacitance and parasitic resistances.


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Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure - 4.9 out of 5 based on 15 votes

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