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Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

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PROJECT TITLE :

Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

ABSTRACT:

An amorphous oxide semiconductor thin-film transistor (TFT) with a 47.7-$ hbox{cm}^{2}cdothbox{V}^{-1}cdothbox{s}^{-1}$ field-effect mobility $(mu_{rm FE})$ and a 1.57-V threshold voltage $(V_{rm TH})$ was produced using a double-stacked active layer composed of a 5-nm indium–zinc–oxide layer and a 60-nm gallium–indium–zinc–oxide (GIZO) layer. The $mu_{rm FE}$ is about 2.3 times higher than that of a GIZO TFT, and the $V_{rm TH}$ is almost same as that of a GIZO TFT. The stability of this TFT with a double-stacked active layer was superior to that of a GIZO TFT.


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Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers - 4.9 out of 5 based on 24 votes

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