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A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets

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PROJECT TITLE :

A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets

ABSTRACT:

We report a three-mask-processed coplanar amorphous-InGaZnO thin-film transistor (TFT) with equal offsets at the source and drain sides. TFTs with offset lengths ranging from 1.5 to 4.0 $mu hbox{m}$ exhibit good switching characteristics with turn-on voltage around $-$1.6 V, gate swing of $sim$ 0.1 V/decade, and on/off current ratio $>hbox{10}^{5}$. While gate swing and turn-on voltage are independent of the offset length, the field-effect mobility decreases from 2.4 to 0.5 $hbox{cm}^{2}/hbox{V} cdot hbox{s}$ as the offset length increases from 1.5 to 4 $muhbox{m}$. This coplanar TFT is suitable for cost-effective active-matrix displays with minimal kickback/feedthrough voltage.


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A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets - 4.8 out of 5 based on 46 votes

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