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The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors

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PROJECT TITLE :

The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors

ABSTRACT:

We investigated the effects of gadolinium (Gd) incorporation into indium–zinc–oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium–indium–zinc–oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 $hbox{cm}^{2}hbox{V}^{-1}hbox{s}^{-1}$, 1.04 V, and on the order of $hbox{10}^{7}$, respectively, after thermal annealing at 250 $^{circ}hbox{C}$. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable ionic bond between Gd and O.


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The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors - 4.8 out of 5 based on 49 votes

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