PROJECT TITLE :

Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs

ABSTRACT:

We present a comparative study of the surface-roughness (SR)-induced variability at low supply voltage $V_{DD} = hbox{0.3} hbox{V}$ in nanowire InAs tunnel FETs and strained-silicon (sSi) MOSFETs. By exploiting a 3-D full-quantum approach based on the Non-Equilibrium Green's Function formalism, we show that the $I_{rm on}$ variability in InAs tunnel FETs is much smaller than the $I_{rm off}$ variability, whereas for $V_{DD} = hbox{0.3} hbox{V}$, the sSi MOSFETs working in the subthreshold regime present similar $I_{rm on}$ and $I_{rm off}$ variability. We explain the smaller $I_{rm on}$ compared with $I_{rm off}$ variability of InAs tunnel FETs by noting that in the source depletion region, where tunneling mainly occurs for $V_{GS} = V_{DD}$, microscopic subband fluctuations induced by SR are small compared to macroscopic band bending due to the built-in potential of the source junction and to the gate bias. This results in SR-induced variability that is larger in InAs tunnel FETs than in sSi MOSFETs.


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