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Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors

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PROJECT TITLE :

Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors

ABSTRACT:

The fabrication process of a hot-electron unipolar transistor with vertical transport based on InAs material is reported. Devices with an emitter width of 0.3 $muhbox{m}$ are fabricated and characterized. This submicrometer geometry allowed suppressing parasitic resistances and achieving high-current densities required for high-frequency operation. For the first time, for a hot-electron transistor, RF performances were achieved at room temperature. Cutoff frequencies of $f_{t} = hbox{75} hbox{GHz}$ and $f_{max} = hbox{88} hbox{GHz}$ were obtained on devices transferred on an insulating substrate.


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Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors - 4.9 out of 5 based on 45 votes

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