Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm


In this letter, we demonstrate state-of-the-art performance from N-polar GaN/InAlN metal–insulator–semiconductor high-electron mobility transistors (MIS-HEMTs). Self-aligned gate-first process was used for the fabrication of transistors. Graded InGaN and InN contact layers were used to achieve a low ohmic contact resistance of 25 $Omegacdot muhbox{m}$. Excellent dc performance with the highest extrinsic $g_{m}$ of 1105 mS/mm, lowest $R_{rm on}$ of 0.29 $Omegacdot hbox{mm}$, and maximum current of 2.77 A/mm was achieved for $L_{g} = hbox{60} hbox{nm}$. The dc performance was found to scale well with the gate length. The highest $f_{T}$ of 155 GHz was obtained for $L_{g} = hbox{30} hbox{nm}$.

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