High-Performance InAs Nanowire MOSFETs


In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an $hbox{Al}_{2}hbox{O}_{3}/hbox{HfO}_{2}$ bilayer was introduced in the high- $kappa$ process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 $hbox{MA/cm}^{2}$$(V_{D} = hbox{0.5} hbox{V})$. For a nominal $L_{G} = hbox{100} hbox{nm}$, we observe an extrinsic transconductance $(g_{m})$ of 1.23 S/mm and a subthreshold swing of 93 mV/decade at $V_{D} = hbox{10} hbox{mV}$.

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