Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_$


This letter discusses the design of high-aspect-ratio T-gates on molecular beam epitaxy (MBE)-grown nitrogen-polar (N-polar) GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) for high power-gain cutoff frequency $(f_{max})$. A 351-GHz $f_{max}$ is demonstrated, which is the highest published to date for an N-polar GaN HEMT. Novel 80-nm-long 1.1-$muhbox{m}$ -tall T-gates with a 370-nm-tall stem were used to simultaneously minimize gate resistance $(R_{g})$ and parasitic gate–drain capacitance $(C_{rm gd})$. The device on -resistance $(R_{rm on})$ of 0.42 $Omegacdothbox{mm}$ was obtained by employing $hbox{n}^{+}$ GaN MBE-regrown ohmic contacts and by scaling the lateral separation between regrown source–drain regions to 250 nm. Within the design space explored, this letter experimentally demonstrates that $f_{max}$ is increased by reducing the gate width and the T-gate top length.

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