Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts


In this letter, we report the demonstration of an effective electron Schottky barrier height $(Phi_{B}^{n})$ reduction technology for NiGe/n-type Germanium (n–Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n–Ge interface. Se was found to segregate at NiGe/n–Ge interface after germanide formation. Nickel monogermanide was formed using a 350 $^{circ}hbox{C}$ 30-s anneal. Se segregation gives $Phi_{B}^{n}$ as low as $sim$0.13 eV.

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