Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive Stress


Experimental evidence is presented for silicon bandgap narrowing in uniaxially strained MOSFETs subjected to both tensile and compressive stress. For both n-channel MOSFETs with $ hbox{n}^{+}$ polysilicon gate and p-channel MOSFETs with $ hbox{p}^{+}$ polysilicon gate, the strain-induced threshold voltage shift $(Delta V_{rm th})$ can be explicitly approximated from the changes in silicon bandgap $(Delta E_{rm g})$ and carrier mobility $(Deltamu)$. From the measurements of both $Delta V_{rm th}$ and $ Deltamu$ associated with the strain $varepsilon$, a simple $Delta E_{rm g}$ model at low strain $varepsilon$ is found to exactly match a tight-binding band structure calculation, clearly indicating the presence of uniaxial strain-induced silicon bandgap narrowing, regardless of strain or carrier type.

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