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Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive Stress

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PROJECT TITLE :

Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive Stress

ABSTRACT:

Experimental evidence is presented for silicon bandgap narrowing in uniaxially strained MOSFETs subjected to both tensile and compressive stress. For both n-channel MOSFETs with $ hbox{n}^{+}$ polysilicon gate and p-channel MOSFETs with $ hbox{p}^{+}$ polysilicon gate, the strain-induced threshold voltage shift $(Delta V_{rm th})$ can be explicitly approximated from the changes in silicon bandgap $(Delta E_{rm g})$ and carrier mobility $(Deltamu)$. From the measurements of both $Delta V_{rm th}$ and $ Deltamu$ associated with the strain $varepsilon$, a simple $Delta E_{rm g}$ model at low strain $varepsilon$ is found to exactly match a tight-binding band structure calculation, clearly indicating the presence of uniaxial strain-induced silicon bandgap narrowing, regardless of strain or carrier type.


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Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive Stress - 4.7 out of 5 based on 94 votes

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