Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs


Junctionless fin field-effect transistor (FinFET) variability due to random dopant fluctuation (RDF) was investigated for sub-32-nm technology generations using technology computer-aided design (TCAD) simulations. Results indicate that variations in threshold voltage, drive current, leakage current, and drain-induced barrier lowering are heavily impacted by RDF for junctionless FinFETs with sufficiently high channel doping (greater than $hbox{10}^{19} hbox{cm}^{-3}$). Unexpectedly, the RDF impact is found to be less severe for finer technology generations, although the overall magnitude is still significant compared to line-edge-roughness-induced variability.

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