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Lift-Off Photolithographic Top-Contact OTFTs Using a Bilayer of PVA and SU8

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PROJECT TITLE :

Lift-Off Photolithographic Top-Contact OTFTs Using a Bilayer of PVA and SU8

ABSTRACT:

A lift-off process for direct photolithographic top-contact organic thin-film transistors (TFTs) has been developed using a bilayer of polyvinyl alcohol and SU8. Top-contact pentacene TFTs fabricated by this method, with a fixed channel width of 300 $muhbox{m}$ but different channel lengths varying from 10 to 80 $muhbox{m}$, exhibited mobility values in the range of 0.01–0.03 $hbox{cm}^{2}/hbox{V}cdothbox{s}$ with the average of $hbox{0.021} pm hbox{0.007} hbox{cm}^{2}/ hbox{V}cdothbox{s}$. It is expected that the adoption of SU8 with a high aspect ratio enables the easy fabrication of submicrometer channel devices, giving rise to improved carrier transport characteristics.


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Lift-Off Photolithographic Top-Contact OTFTs Using a Bilayer of PVA and SU8 - 4.8 out of 5 based on 25 votes

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