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PROJECT TITLE :

Operation Voltage Control in Complementary Resistive Switches Using Heterodevice

ABSTRACT:

For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a $hbox{HfO}_{x}$-based ReRAM with a $hbox{TiO}_{x}$-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS.


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