PROJECT TITLE :
Operation Voltage Control in Complementary Resistive Switches Using Heterodevice
ABSTRACT:
For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a $hbox{HfO}_{x}$-based ReRAM with a $hbox{TiO}_{x}$-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here
