Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

1 1 1 1 1 Rating 4.80 (90 Votes)

PROJECT TITLE :

Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

ABSTRACT:

Bottom-gate metal-over-active (MOA) and active-over-metal (AOM) amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistors (TFTs), with channel lengths varying from 1 to 16 $muhbox{m}$, are investigated with low-frequency noise (LFN) measurements in the linear region of operation. In the low drain–current range, LFN originates from carrier number fluctuations, whereas in the high drain–current range, the noise is affected by the series resistance. The extracted gate-insulator trap densities near the interface lead to the conclusion that the AOM a-IGZO TFTs are superior compared to the MOA devices.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements - 4.8 out of 5 based on 90 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...