Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD Gate Dielectric


This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium–gallium–zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) $hbox{Al}_{2}hbox{O}_{3}$ as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low ${V}_{T}$ of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 $hbox{cm}^{2}/(hbox{V}cdothbox{s})$, and a large ${I}_{rm on}/{I}_{rm off}$ ratio of $hbox{1} times hbox{10}^{8}$.

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