Dual-Gate MOSFET With Atomic-Layer-Deposited as Top-Gate Dielectric


We demonstrate atomic-layer-deposited (ALD) high-$k$ dielectric integration on 2-D layer-structured molybdenum disulfide ($ hbox{MoS}_{2}$) crystals and $hbox{MoS}_{2}$ dual-gate n-channel MOSFETs with ALD $hbox{Al}_{2}hbox{O}_{3}$ as the gate dielectric. Our $C$– $V$ study of MOSFET structures shows good interface between 2-D $hbox{MoS}_{2}$ crystal and ALD $hbox{Al}_{2}hbox{O}_{3}$. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at $V_{rm ds} = hbox{2} hbox{V}$ with a channel width of 3 $muhbox{m}$, a channel length of 9 $muhbox{m}$, and a top-gate length of 3 $muhbox{m}$. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 $hbox{cm}^{2}/hbox{V}cdothbox{s}$ . The highest current on/off ratio is over $hbox{10}^{8}$.

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