MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05


Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method measurements were carried out from 4 K to 350 K. Although the total contact resistance is dominated by the $hbox{metal}/ hbox{n}^{+}hbox{-}hbox{GaN}$ resistance ($sim$ 0.16 $Omegacdothbox{mm}$), the resistance induced by the interface between the regrown $hbox{n}^{+}$ GaN and HEMT channel is found to be 0.05–0.075 $Omegacdothbox{mm}$ over the entire temperature window, indicating a minimal barrier for electron flow at the as-regrown interface. The quantum contact resistance theory suggests that the interface resistance can be further reduced to be $<$ 0.02 $Omegacdot hbox{mm}$ in GaN HEMTs.

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