RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond


We epitaxially grow AlGaN/GaN high-electron-mobility transistors (HEMTs) on IIa-type single-crystal diamond (111) substrates. A 0.4-$muhbox{m}$ gate-length HEMT showed a dc drain-current density $I_{rm DS}$ of 770 mA/mm and a breakdown voltage of 165 V. In the RF large-signal measurements at 1 GHz, an RF output-power density $P_{rm OUT}$ of 2.13 W/mm was obtained. This is the first report of RF power operation of AlGaN/GaN HEMTs epitaxially grown on diamond. The AlGaN/GaN HEMTs epitaxially grown on diamond showed a low thermal resistance of 1.5 $hbox{K}cdothbox{mm}/hbox{W}$ .

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