Variability Origins of Parasitic Resistance in FinFETs With Silicided Source/Drain


Origins of parasitic resistance $R_{rm para}$ fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance $R_{rm ext}$ reflecting fin thickness $T_{rm fin}$ fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces $R_{rm para}$ on average, it causes additional fluctuation of $R_{rm para}$. Analyzing the correlation of the $R_{rm para}$ fluctuation with the fluctuation in $T_{rm fin}$ and the lateral growth of NiSi, the dominant origin of the $R_{rm para}$ fluctuation is specified to be the $hbox{NiSi/n}^{+}$–Si contact resistance.

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