LDMOS Transistor High-Frequency Performance Enhancements by Strain


The effects of mechanical stress on the dc and high-frequency performances of laterally diffused MOS (LDMOS) transistors with different layout structures were investigated by using the wafer bending method. A 3.1% peak cutoff frequency $(f_{T})$ enhancement is achieved for the multifinger device under 0.051% biaxial tensile strain. For LDMOS with annular layout, the $f_{T}$ enhancement is increased to 3.7% due to the various channel directions. Our results suggest the strain technology can be adopted in LDMOS for RF applications. The transconductance and gate capacitance were also extracted to clearly demonstrate the $f_{T}$ variations.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :A High-Voltage (>600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI TechnologyABSTRACT:A high-voltage lateral double-subtle MOSFET with N-island (NIS) and step-doped drift (SDD) region in partial
PROJECT TITLE :Back-Gate Effect on $R_},sp}}}$ and BV for Thin Layer SOI Field p-Channel LDMOSABSTRACT:The Backgate (BG) effect on specific ON-resistance ( $R_{{{mathrm{{scriptscriptstyle ON}},rm sp}}})$ and breakdown voltage
PROJECT TITLE : Video Dissemination over Hybrid Cellular and Ad Hoc Networks - 2014 ABSTRACT: We study the problem of disseminating videos to mobile users by using a hybrid cellular and ad hoc network. In particular, we formulate
PROJECT TITLE : Security Analysis of Handover Key Management in 4G LTESAE Networks - 2014 ABSTRACT: The goal of 3GPP Long Term Evolution/System Architecture Evolution (LTE/SAE) is to move mobile cellular wireless technology
PROJECT TITLE : Secure and Efficient Data Transmission for Cluster-Based Wireless Sensor Networks - 2014 ABSTRACT: Secure data transmission is a critical issue for wireless sensor networks (WSNs). Clustering is an effective

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry