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Evidence for a Very Small Tunneling Effective Mass (0.03 ) in MOSFET High- (HfSiON) Gate Dielectrics

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PROJECT TITLE :

Evidence for a Very Small Tunneling Effective Mass (0.03 ) in MOSFET High- (HfSiON) Gate Dielectrics

ABSTRACT:

We have recently conducted experimental and modeling tasks on TaC/HfSiON/SiON n-type MOSFETs, leading to an effective mass of 0.03$m_{0}$ for 2-D electrons tunneling in high-$k$ HfSiON dielectrics. In this letter, we present extra evidence obtained from complementary MOSFETs undergoing the same TaC/HfSiON/SiON processing, which shows that such a very small tunneling effective mass is existent not only for 3-D electrons but also for 2-D holes. This new finding is very important because it can substantially enhance the current understanding of gate tunneling leakage suppression in metal-gate high-$k$ MOSFETs.


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Evidence for a Very Small Tunneling Effective Mass (0.03 ) in MOSFET High- (HfSiON) Gate Dielectrics - 4.8 out of 5 based on 46 votes

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