PROJECT TITLE :

Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer

ABSTRACT:

The RF power output of scaled subterahertz and terahertz indium phosphide double-heterostructure bipolar transistors (InP DHBTs) is limited by the thermal device resistance, that increases with the geometrical frequency scaling of these devices. We present a diamond thin-film heat sink process aimed at the efficient removal of the warmth generated in submicrometer InP HBTs. The thin-film diamond is integrated in a wafer bond process. Vertical connections are facilitated by plasma-processed contact holes through the diamond layer, metallized with electroplated gold. The process is suitable for monolithic circuit integration, amenable to the realization of high-power analog circuits within the millimeter-wave region and beyond. The thermal resistance of double-finger transistors with a zero.eight- emitter width could be reduced to zero.seven K/mW, whereas reaching the gain cutoff frequencies of GHz and GHz. An integrated 2-stage power amplifier with four-means power combining fabricated during this technology exhibited 20-dBm power output at ninety GHz with a bandwidth of 10 GHz.


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