Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization


In this paper, we tend to investigate in depth Forming, SET, and Retention of conductive-bridge random-access memory (CBRAM). A kinetic Monte Carlo model of the CBRAM has been developed considering ionic hopping and chemical reaction dynamics. Based on inputs from ab initio calculations and the physical properties of the materials, the model offers the simulation of each the Forming/SET and the data Retention operations. It aims to make a bond between the physics at atomic level and therefore the device behavior. From the model and experimental results obtained on decananometric devices, we tend to propose an understanding of the physical mechanisms involved in the CBRAM operations. Using the consistent Forming/SET and Information Retention model, we tend to obtained sensible agreement with the experimental information. Finally, the impact of every layer of the CBRAM on the Forming/SET behavior is decorrelated, allowing an optimization of the performance.

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