An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes


An improved Bosch etching method using inductively coupled plasma system has been investigated for the etching of 4H-silicon carbide (SiC). By optimizing the etch parameters, a mesa structure with nearly vertical sidewall and without microtrench at the bottom corner has been fabricated, and therefore the formation and elimination of the microtrench are preliminarily mentioned for the Bosch cycles in this paper. Scanning electron microscopic analysis was used to demonstrate the etched morphology under different etching conditions. Straightforward mesa-terminated 4H-SiC p-i-n diodes were fabricated. The result of the improved mesa structure on the dc characteristics of the diodes has been experimentally verified by comparing with the nonoptimized mesa structure with microtrench. The results exhibited a utterly consistent forward tendency and a similar reverse leakage level less than −90zero V for both diodes, but different blocking performances. A maximum blocking voltage of 1565 V at area temperature was obtained from the nonmicrotrenched device with a mesa height of four.3 $mu textm$ , resembling sixty six% of a parallel plane breakdown voltage for the drift layer of fifteen $mu textm$ . Slight microtrench is the main cause of premature breakdown.

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