Electrical Modeling and Analysis of a Mixed Carbon Nanotube Based Differential Through Silicon via in 3-D Integration


Based on the extracted equivalent parasitic parameters, the distributed transmission line model of a mixed carbon nanotube bundle (MCB) designed signal-ground-signal-type differential through silicon via (TSV) is established and validated against the multiconductor transmission line model (MTL) results and predictive experiment results over a large frequency range. Using the proposed model, the impact of varied dimensional parameters and material properties on the signal loss and characteristic impedances of the differential TSV interconnect is investigated for odd- and even-mode signal propagation, respectively. It's observed that dielectric thickness is the foremost necessary factor affecting the transmission characteristics of TSV interconnects for the proposed TSV configuration. Moreover, numerous electrical performances of the proposed differential TSV, like insertion loss, eye opening space, characteristic impedances, and fiftypercent time delay are evaluated and compared to that of a symbol-ground-sort single ended TSV interconnect. The results presented during this paper will be helpful to fully perceive the CNT-TSV electrical characterization and provide some signal integrity-aware guidelines for circuit designers in early designing stage.

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