PROJECT TITLE :
A Nonparabolic Bandstructure Model for Computationally Efficient Quantum Transport Simulations
With the increasing concentrate on III–V materials as potential candidates for next-generation nanotransistors, advanced bandstructure models going beyond the parabolic band approximation are required to make sure accurate device simulations. For that purpose, we have a tendency to present a easy manner to include nonparabolic (NP) bandstructure effects into quantum transport calculations based mostly on the effective mass approach. This theme does not only properly account for the NP effects present in the thermionic current of transistors, but additionally in their supply-to-drain tunneling leakage. The tactic is validated by simulating 2-D and 3-D In0.53Ga0.47As nanoscale transistors with 2 variants of the proposed NP model. An wonderful agreement with full-band results is demonstrated in all the cases.
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