PROJECT TITLE :
Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells
In this letter, we tend to propose a CMOS-compatible selector prototype based mostly on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like $I$ – $V$ characteristics with a selectivity of more than $ten^7$ . This volatile PMC will be modified to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.
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