Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells


In this letter, we tend to propose a CMOS-compatible selector prototype based mostly on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like $I$ – $V$ characteristics with a selectivity of more than $ten^7$ . This volatile PMC will be modified to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry