Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs


In this letter, the impact of self-heating impact (SHE) on hot carrier degradation (HCD) in multiple-fin silicon-on-insulator (SOI) FinFETs was investigated. 1st, the ac conductance method has been utilised to extract the thermal resistance ( ) of SOI FinFETs with different fin numbers. Then, each dc and ac stresses are applied on the gate and drain of transistors with the supply grounded to characterize the HCD. It's found that the device with large fin number demonstrates high-temperature rise caused by SHE, that ends up in the improved generation of oxide bulk trapped charges. Therefore, the SHE aggravates the HCD significantly. The influence of SHE on HCD is mitigated when the frequency of ac stress is higher than 10 MHz. So, special attention to the SHE on HCD should be got accurate HCD prediction in FinFETs.

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