A V-Band CMOS Divide-by-Three ILFD With Frequency-Dependent Injection Enhancement


This letter presents a V-band divide-by-three injection-locked frequency divider (ILFD) with low power consumption and wide locking vary, by using the novel frequency-dependent injection enhancement (FDIE) technique. The optimum tradeoff between amplitude and phase locking conditions of the FDIE circuit is first analyzed theoretically. Then a current-reused differential pre-amplifier loaded with a moderate-k transformer for FDIE circuit is proposed to obtain the best locking range under such trade-off. Fabricated in a very sixty five nm CMOS technology, the proposed ILFD prototype demonstrates a wide input locking range of fifty four.five–sixty two.thirty six GHz (13.five%) and only a pair of.five mA current consumption with one.a pair of V offer.

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