PROJECT TITLE :
Manufacturing-tolerant compact red-emitting laser diode designs for next generation applications
Quantum well laser diodes with low so much-field divergence remain a demand for several applications such as optical interconnects and data networks, pump sources and next generation holographic red-green-blue displays requiring compact, high power, visible light-weight sources with high spatial and spectral coherence. Many designs exist, however the structure should be straightforward to grow reproducibly, which has commercial blessings. The authors' low far-field divergence design widens the vertical mode in such a manner as to decrease the so much-field divergence without considerably reducing the confinement factor, thus keeping threshold current lower. In this study, the authors calculate the sensitivity of their style, which has high refractive index mode enlargement layers inserted within the cladding, to unintentional variations in layer thickness and composition during growth. They acquire consistency in measured far-fields for 3 wafers grown over an interval of a year, with a full-width-half-maximum vertical far-field divergence of seventeen° for a narrow style (Design A) and simply underneath thirteen° for a very slim style (Style B). They have demonstrated a helpful, reproducible style, adding to the range of versatile semiconductor lasers accessible for each application.
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