6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack


In this letter, the approach of partial AlGaN recess and multiple layers of fluorinated Al2O3 gate dielectric is utilized to achieve highest reported positive gate threshold voltage ( $V_textrm TH$ ) without severe reduction on two-D electron gas carrier mobility in AlGaN/GaN HEMTs. Guided by the look and verification through analytical model, correct fluorine ions incorporation is made through fabrication. The approach resulted during a high $V_textrm TH$ of +half dozen.5 V and competitive drain saturation current ( $I_textrm DMAX$ ) of 340 mA/mm. Furthermore, low gate leakage current and high breakdown voltage of 1140 V were also demonstrated.

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