PROJECT TITLE :
A Broadband 4.5–15.5-GHz SiGe Power Amplifier With 25.5-dBm Peak Saturated Output Power and 28.7% Maximum PAE
This paper presents the design of a broadband power amplifier (PA) in 130-nm SiGe BiCMOS technology. Initial, a single-stage broadband single-cell PA covering the four.five–18-GHz frequency band is introduced. In this frequency vary, this single cell achieves a measured gain, saturated output power , output 1-dB compression purpose , and power-added efficiency (PAE) within the range from 12.8 to 15.7 dB, 18.8 to twenty three.7 dBm, 16.7 to nineteen.5 dBm, and 11.4 to 31.nine%, respectively. Its peak saturated output power and maximum PAE are each obtained at 8.five GHz. Second, to extend the output power, a PA consisting of two parallel broadband cells with a power combination is presented. This PA operates in the four.5–15.5-GHz frequency range with measured gain, , and PAE within the vary from eleven to 16.half dozen dB, twenty one.three to 25.5 dBm, 18.7 to twenty one.seven dBm, and eleven.nine to 28.seven%, respectively. It achieves its peak saturated output power of twenty five.5 dBm at eight.five GHz and its most PAE of 28.7% with an associated output power of twenty three.six dBm at half-dozen.five GHz. Every of these two PAs achieves higher performances than the state-of-the-art in broadband SiGe technology when comparing the output power level and efficiency.
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