A Broadband 4.5–15.5-GHz SiGe Power Amplifier With 25.5-dBm Peak Saturated Output Power and 28.7% Maximum PAE


This paper presents the design of a broadband power amplifier (PA) in 130-nm SiGe BiCMOS technology. Initial, a single-stage broadband single-cell PA covering the four.five–18-GHz frequency band is introduced. In this frequency vary, this single cell achieves a measured gain, saturated output power , output 1-dB compression purpose , and power-added efficiency (PAE) within the range from 12.8 to 15.7 dB, 18.8 to twenty three.7 dBm, 16.7 to nineteen.5 dBm, and 11.4 to 31.nine%, respectively. Its peak saturated output power and maximum PAE are each obtained at 8.five GHz. Second, to extend the output power, a PA consisting of two parallel broadband cells with a power combination is presented. This PA operates in the four.5–15.5-GHz frequency range with measured gain, , and PAE within the vary from eleven to 16.half dozen dB, twenty one.three to 25.5 dBm, 18.7 to twenty dBm, and eleven.nine to, respectively. It achieves its peak saturated output power of twenty five.5 dBm at eight.five GHz and its most PAE of 28.7% with an associated output power of twenty three.six dBm at half-dozen.five GHz. Every of these two PAs achieves higher performances than the state-of-the-art in broadband SiGe technology when comparing the output power level and efficiency.

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