InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding


InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not solely because the bonding layer but additionally as electrodes. Our Fabry–Pérot lasers operate with a threshold current density of 520 $rm A,cdot , rm cm^-2$ for the broad-space laser, and a threshold current of one hundred ten mA for the ridge laser. The bonded lasers exhibit an InAs QD ground-state lasing at $1.three~mu textm$ at space temperature.

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