PROJECT TITLE :

InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding

ABSTRACT:

InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not solely because the bonding layer but additionally as electrodes. Our Fabry–Pérot lasers operate with a threshold current density of 520 $rm A,cdot , rm cm^-2$ for the broad-space laser, and a threshold current of one hundred ten mA for the ridge laser. The bonded lasers exhibit an InAs QD ground-state lasing at $1.three~mu textm$ at space temperature.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


PROJECT TITLE :Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cellsABSTRACT:The result of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is studied. A important improvement in photoemission,
PROJECT TITLE :Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substratesABSTRACT:The authors report 1.3-μm InAs/GaAs quantum-dot (QD) lasers monolithically grown
PROJECT TITLE :Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs CoverageABSTRACT: 10-, 20-, and forty-layer InAs/GaAs quantum-dot (QD)-embedded superlattice solar cells were compared with

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry