High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing


In this letter, we discuss the temperature distribution of sunshine-illuminated Si substrates with time and the successful fabrication of high-performance, solution-processed indium-oxide thin-film transistors inside an annealing time of 2 min employing a high-power flash lamp beneath ambient conditions. The precursor films are fully converted into oxide films inside thirty s using flash lamp annealing (FLA). Thence, we obtained the high performance of indium-oxide TFTs with the mobility of spectacular thirty eight.9 cm $^2textV^-1texts^-1$ with the on/off ratio of $sim ten^vphantom R^l4$ for the irradiation time of 2 min and also the mobility of 10.3 cm $^2textV^-1texts^-1$ with the on/off ratio of $sim five times ten^6$ for the irradiation time of ten s for three times, which is the best mobility ever reported using FLA. This result can be useful for breaking the barrier in the mass production of the subsequent-generation semiconductors.

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