PROJECT TITLE :
A New Transform Related to Distance From a Boolean Function
We tend to introduce a replacement technique to review the crystallization method in part-amendment memory. By this system, crystallization is characterized in the ON-state at extremely low currents, permitting to increase the time scale of crystallization times to additional than 2 decades. To explain the heart beat-induced crystallization within the set regime, we tend to develop a finite-part technique model based on localized conduction in the amorphous phase and non-Arrhenius crystallization kinetics. The vary of crystallization times is then extended to even lower currents in the subthreshold regime, where the model permits describing the crystallization kinetics therefore providing the physics-primarily based prediction of scan disturb.
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