Dead-time optimisation for a phase-shifted dc–dc full bridge converter with GaN HEMT


An accurate dead-time adjustment method for part-shifted full bridge (PSFB) converter is presented. This method permits the dead-time of converters to be optimised to fulfill zero voltage switching condition. The optimum dead-time vary can be predicted with high accuracy for any sort of power semiconductor switch, as well as gallium nitride high-electron-mobility transistor, thus that a sensible style for a PSFB converter can be realised. The validity of the proposed dead-time optimisation technique was verified by experimental results with a 60zero W prototype.

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