Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer


In this paper, the nonlinear switching mechanism of the Ti/HfO2/Al2O3/TiN crossbar structure resistive random access memory device with good reliability is investigated. The nonlinearity of the device will be revealed by inserting a large bandgap of an Al2O3 skinny layer between the TiN bottom electrode and the HfO2 switching film. The nonlinear switching mechanism caused by Flower-Nordheim tunneling involves the tunneling barrier of the Al2O3 layer. Besides, the nonlinear behavior is also sensitive to the thickness of the inserting Al2O3 layer. A high nonlinear factor of 37, massive endurance a lot of than 104, and good retention properties are achieved within the Ti/HfO2/Al2O3 (1-nm)/TiN structure.

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